Semiconductor device and method for fabricating the same

ABSTRACT

A method for fabricating semiconductor device includes: forming a fin-shaped structure on a substrate, wherein the fin-shaped structure is extending along a first direction; forming a gate layer on the fin-shaped structure; removing part of the gate layer and part of the fin-shaped structure to form a first trench for dividing the fin-shaped structure into a first portion and a second portion, wherein the first trench is extending along a second direction; forming a patterned mask on the gate layer and into the first trench; removing part of the gate layer and part of the fin-shaped structure to form a second trench, wherein the second trench is extending along the first direction; and filling a dielectric layer in the first trench and the second trench.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. application Ser. No. 16/396,777filed Apr. 29, 2019, and incorporated herein by reference in itsentirety.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The invention relates to a method for fabricating semiconductor device,and more particularly to a method for dividing fin-shaped structure toform single diffusion break (SDB) structure.

2. Description of the Prior Art

With the trend in the industry being towards scaling down the size ofthe metal oxide semiconductor transistors (MOS), three- dimensional ornon-planar transistor technology, such as fin field effect transistortechnology (FinFET) has been developed to replace planar MOStransistors. Since the three-dimensional structure of a FinFET increasesthe overlapping area between the gate and the fin-shaped structure ofthe silicon substrate, the channel region can therefore be moreeffectively controlled. This way, the drain-induced barrier lowering(DIBL) effect and the short channel effect are reduced. The channelregion is also longer for an equivalent gate length, thus the currentbetween the source and the drain is increased. In addition, thethreshold voltage of the fin FET can be controlled by adjusting the workfunction of the gate.

In current FinFET fabrication, after shallow trench isolation (STI) isformed around the fin-shaped structure part of the fin-shaped structureand part of the STI could be removed to form a trench, and insulatingmaterial is deposited into the trench to form single diffusion break(SDB) structure or isolation structure. However, the integration of theSDB structure and metal gate fabrication still remains numerousproblems. Hence how to improve the current FinFET fabrication andstructure has become an important task in this field.

SUMMARY OF THE INVENTION

According to an embodiment of the present invention, a method forfabricating semiconductor device includes the steps of: forming afin-shaped structure on a substrate, wherein the fin-shaped structure isextending along a first direction; forming a gate layer on thefin-shaped structure; removing part of the gate layer and part of thefin-shaped structure to form a first trench for dividing the fin-shapedstructure into a first portion and a second portion, wherein the firsttrench is extending along a second direction; forming a patterned maskon the gate layer and into the first trench; removing part of the gatelayer and part of the fin-shaped structure to form a second trench,wherein the second trench is extending along the first direction; andfilling a dielectric layer in the first trench and the second trench.

According to another aspect of the present invention, a semiconductordevice preferably includes a first gate structure and a second gatestructure on a shallow trench isolation (STI), a first hard mask on thefirst gate structure and a second hard mask on the second gatestructure, and a gate isolation structure between the first gatestructure and the second gate structure, in which a top surface of thegate isolation structure is lower than a top surface of the first gatestructure.

According to yet another aspect of the present invention, asemiconductor device includes a gate isolation structure on a shallowtrench isolation (STI), a first epitaxial layer on one side of the gateisolation structure, and a second epitaxial layer on another side of thegate isolation structure.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view illustrating a method for fabricating asemiconductor device according to an embodiment of the presentinvention.

FIG. 2 illustrates cross-section views of FIG. 1 along the sectionalline AA′ and sectional line BB′.

FIG. 3 illustrates a method for fabricating a semiconductor deviceaccording to an embodiment of the present invention following FIG. 2.

FIG. 4 is a top view illustrating a method for fabricating asemiconductor device according to an embodiment of the present inventionfollowing FIG. 1,

FIG. 5 illustrates cross-section views of FIG. 4 along the sectionalline CC′ and sectional line DD′.

FIG. 6 is a top view illustrating a method for fabricating asemiconductor device according to an embodiment of the present inventionfollowing FIG. 4.

FIG. 7 illustrates cross-section views of FIG. 6 along the sectionalline EE′ and sectional line FF′.

FIG. 8 illustrates a method for fabricating a semiconductor deviceaccording to an embodiment of the present invention following FIG. 7.

FIG. 9 is a top view illustrating a method for fabricating asemiconductor device according to an embodiment of the present inventionfollowing FIG. 6.

FIG. 10 illustrates cross-section views of FIG. 9 along the sectionalline GG′ and sectional line HH′.

FIG. 11 illustrates a method for fabricating a semiconductor deviceaccording to an embodiment of the present invention following FIG. 10.

FIG. 12 is a top view illustrating a method for fabricating asemiconductor device according to an embodiment of the present inventionfollowing FIG. 9.

FIG. 13 illustrates a cross-section view of FIG. 12 along the sectionalline II′.

FIG. 14 illustrates a cross-section view of FIG. 12 along the sectionalline JJ′.

FIG. 15 illustrates a cross-section view of FIG. 12 along the sectionalline KK′.

DETAILED DESCRIPTION

Referring to FIGS. 1-2, in which FIG. 1 is a top view illustrating amethod for fabricating a semiconductor device according to an embodimentof the present invention, the left portion of FIG. 2 illustrates across-sectional view of FIG. 1 for fabricating the semiconductor devicealong the sectional line AA', and the right portion of FIG. 2illustrates a cross-sectional view of FIG. 1 for fabricating thesemiconductor device along the sectional line BB'. As shown in FIGS.1-2, a substrate 12, such as a silicon substrate or silicon-on-insulator(SOI) substrate is first provided, and a plurality of fin-shapedstructures 14 extending along a first direction (such as theX-direction)_are formed on the substrate 12. It should be noted thateven though eight fin-shaped structures 14 are disposed on the substrate12 in this embodiment, it would also be desirable to adjust the numberof fin-shaped structures 14 depending on the demand of the product,which is also within the scope of the present invention.

Preferably, the fin-shaped structures 14 of this embodiment could beobtained by a sidewall image transfer (SIT) process. For instance, alayout pattern is first input into a computer system and is modifiedthrough suitable calculation. The modified layout is then defined in amask and further transferred to a layer of sacrificial layer on asubstrate through a photolithographic and an etching process. In thisway, several sacrificial layers distributed with a same spacing and of asame width are formed on a substrate. Each of the sacrificial layers maybe stripe-shaped. Subsequently, a deposition process and an etchingprocess are carried out such that spacers are formed on the sidewalls ofthe patterned sacrificial layers. In a next step, sacrificial layers canbe removed completely by performing an etching process. Through theetching process, the pattern defined by the spacers can be transferredinto the substrate underneath, and through additional fin cut processes,desirable pattern structures, such as stripe patterned fin-shapedstructures could be obtained. It should be noted that the bumps 16protruding above the surface of the substrate 12 are preferablyfin-shaped structures remained on the surface of the substrate 12 afterthe fin cut process is completed therefore the height of the bumps 16are substantially lower than the height of the fin-shaped structures 14on the left portion of FIG. 2.

Alternatively, the fin-shaped structures 14 could also be obtained byfirst forming a patterned mask (not shown) on the substrate, 12, andthrough an etching process, the pattern of the patterned mask istransferred to the substrate 12 to form the fin-shaped structures 14.Moreover, the formation of the fin-shaped structures 14 could also beaccomplished by first forming a patterned hard mask (not shown) on thesubstrate 12, and a semiconductor layer composed of silicon germanium isgrown from the substrate 12 through exposed patterned hard mask viaselective epitaxial growth process to form the corresponding fin-shapedstructures 14. These approaches for forming fin-shaped structure are allwithin the scope of the present invention.

Next, a shallow trench isolation (STI) 18 is formed around thefin-shaped structures 14, such as surrounding the fin-shaped structures14 in the left portion of FIG. 2 and disposed on top of the bumps 16 inthe right portion of FIG. 2. In this embodiment, the formation of theSTI 18 could be accomplished by conducting a flowable chemical vapordeposition (FCVD) process to form a silicon oxide layer on the substrate12 and covering the fin-shaped structures 14 entirely. Next, a chemicalmechanical polishing (CMP) process along with an etching process areconducted to remove part of the silicon oxide layer so that the topsurface of the remaining silicon oxide is even with or slightly lowerthan the top surface of the fin-shaped structures 14 for forming the STI18.

Next, a gate dielectric layer 20 and a gate layer 22 are formed to coverthe fin-shaped structures 14 and the STI 18 entirely, and a patternedmask 24 is formed on the gate layer 22, in which the patterned mask 22includes an opening 26 exposing part of the gate layer 22 surface. Inthis embodiment, the gate dielectric layer 20 preferably includessilicon oxide and the gate layer 22 is selected from the groupconsisting of amorphous silicon and polysilicon. The patterned mask 24could additionally include an organic dielectric layer (ODL), asilicon-containing hard mask bottom anti-reflective coating (SHB), and apatterned resist and the step of forming the opening 26 in the patternedmask 24 could be accomplished by using the patterned resist as mask toremove part of the SHB and part of the ODL. It should be noted that inorder to more clearly illustrate the fabrication process conductedthereafter, the gate dielectric layer 20 between the STI 18 and gatelayer 22 is not shown in the cross-section view taken along thesectional line BB′.

Next, as shown in left portion of FIG. 3, an etching process isconducted by using the patterned mask 24 as mask to remove part of thegate layer 22, part of the gate dielectric layer 20, and part of thefin-shaped structures 14 to form a first trench 28 and at the same timedivide the fin-shaped structures 14 into two portions including a firstportion 30 on the left side of the first trench 28 and a second portion32 on the right side of the first trench 28, in which the first trench28 preferably extends along a second direction (such as Y-direction)orthogonal to the first direction.

Next, referring to FIGS. 4-5, in which FIG. 4 is a top view illustratinga method for fabricating a semiconductor device according to anembodiment of the present invention following FIG. 1, the left portionof FIG. 5 illustrates a cross-sectional view of FIG. 4 for fabricatingthe semiconductor device along the sectional line CC′, and the rightportion of FIG. 5 illustrates a cross-sectional view of FIG. 4 forfabricating the semiconductor device along the sectional line DD′. Asshown in FIGS. 4-5, it would be desirable to first remove the patternedmask 34 completely, and then form another patterned mask 34 on the gatelayer 22 to fill the first trench 28 completely, in which the patternedmask 34 preferably includes an opening extending along the firstdirection (such as X-direction) and exposing part of the gate layer 22between the top four fin-shaped structures 14 and the bottom fourfin-shaped structures 14. Next, the patterned mask 34 is used as a maskto remove part of the gate layer 22 and exposing the STI 18 underneathto form a second trench 36, in which the second trench 36 preferablyextends along the first direction between the top four fin-shapedstructures 14 and bottom four fin-shaped structures 14 as shown in FIG.4.

Next, referring to FIGS. 6-7, in which FIG. 6 is a top view illustratinga method for fabricating a semiconductor device according to anembodiment of the present invention following FIG. 4, the left portionof FIG. 7 illustrates a cross-sectional view of FIG. 6 for fabricatingthe semiconductor device along the sectional line EE′, and the rightportion of FIG. 7 illustrates a cross-sectional view of FIG. 6 forfabricating the semiconductor device along the sectional line FF′. Asshown in FIGS. 6-7, it would be desirable to first remove the patternedmask 34 completely and then forming a dielectric layer 38 to cover thegate layer 22 while filling the first trench 28 and the second trench36. Next, a planarizing process such as chemical mechanical polishing(CMP) process is conducted to remove part of the dielectric layer 38 sothat the top surface of the remaining dielectric layer 38 is even withthe top surface of the gate layer 22. This forms a single diffusionbreak (SDB) structures 40 in the first trench 28 and a gate isolationstructure 42 in the second trench 36 at the same time. In thisembodiment, the SDB structure 40 and gate isolation structure 42 made ofdielectric layer 38 could include same material or different material asthe STI 18. For instance, the SDB structure 40 and the gate isolationstructure 42 in this embodiment could include but not limited to forexample silicon oxide, silicon nitride (SiN), and/or silicon oxynitride(SiON).

Next, as shown in FIG. 8, a hard mask 44 is formed on the gate layer 22,the SDB structure 40, and the gate isolation structure 42, and apatterned mask 46 is formed on the hard mask 44 while exposing part ofthe hard mask 44 surface. In this embodiment, the hard mask 44preferably includes a composite structure such as a hard mask 48 andanother hard mask 50, in which the hard mask 48 and the hard mask 50 arepreferably made of different materials. For instance, the hard mask 48is preferably made of SiN while the hard mask 50 is made of siliconoxide, but not limited thereto. The patterned mask 46 could include asingle patterned resist or could be made of same material as thepatterned mask 24 shown in FIG. 2. For instance, the patterned mask 46could include a tri-layer structure having an organic dielectric layer(ODL), a silicon-containing hard mask bottom anti-reflective coating(SHB), and a patterned resist, which are all within the scope of thepresent invention.

Referring to FIGS. 9-10, in which FIG. 9 is a top view illustrating amethod for fabricating a semiconductor device according to an embodimentof the present invention following FIG. 6, the left portion of FIG. 10illustrates a cross-sectional view of FIG. 9 for fabricating thesemiconductor device along the sectional line GG', and the right portionof FIG. 10 illustrates a cross-sectional view of FIG. 9 for fabricatingthe semiconductor device along the sectional line HH'. As shown in FIGS.9-10, the patterned mask 46 is then used as mask to remove part of thehard mask 44, part of the gate layer 22, and part of the gate dielectriclayer 20 to form a plurality of gate electrode or gate structures 52, 54extending along the second direction (or Y-direction) and standingastride on the fin-shaped structures 14, in which the patterned hardmask 44 is disposed on each of the gate electrode or gate structures 52,54. It should be noted that since a gate isolation structures 42 hasalready been formed between the top four fin-shaped structures 14 andthe bottom four fin-shaped structures 14 before the patterned mask 46 isformed, four separate gate structures 52, 54 not contacting each otherare automatically formed when the patterned mask 46 is used as mask toremove part of the hard mask 44 and part of the gate layer 22 fordefining the pattern of the gate structures 52, 54.

It should further be noted that when the patterned mask 46 is used asmask to remove part of the hard mask 44 and part of the gate layer 22 toform gate structures 52, 54, part of the SDB structures 40 and/or gateisolation structure 42 could also be removed to obtain lower heights.For instance, as shown in FIG. 10, the tip or topmost surfaces of theSDB structure 40 and the gate isolation structure 42 are preferablylower than the topmost surface of the gate structures 52, 54 or gateelectrodes including the gate dielectric layer 20 and the gate layer 22,in which the SDB structure 40 preferably protrudes above the fin-shapedstructure 14 surface, the gate isolation structure 42 is disposed on theSTI 18, and the top surfaces of the SDB structure 40 and the gateisolation structure 42 are coplanar.

Next, as shown in FIG. 11, a cap layer could be formed on the fin-shapedstructures 14 to cover the gate structures 52, 54, the SDB structure 40,and the gate isolation structure 42, and an etching process is conductedto remove part of the cap layer for forming at least a spacer 56adjacent to the sidewalls of the gate structure 42 and at the same timeforming a spacer 58 on the sidewalls of the SDB structure 40 and aspacer 60 on sidewalls of the gate isolation structure 42. Next,source/drain regions 62 and/or epitaxial layers 64 are formed in thefin-shaped structures 14 adjacent to two sides of the spacers 56, 58,and silicides (not shown) could be selectively formed on the surface ofthe source/drain regions 60 and/or epitaxial layers 64 afterwards. Inthis embodiment, each of the spacers 56, 58, 60 could be a single spaceror a composite spacer, such as a spacer including but not limited to forexample an offset spacer and a main spacer. Preferably, the offsetspacer and the main spacer could include same material or differentmaterial while both the offset spacer and the main spacer could be madeof material including but not limited to for example SiO₂, SiN, SiON,SiCN, or combination thereof. The source/drain regions 62 could includedopants of different conductive type depending on the type of devicebeing fabricated.

Next, a contact etch stop layer (CESL) 66 is formed on the surface ofthe fin-shaped structures 14 and covering the gate structure 52, 54, theSDB structure 40, and the gate isolation structure 42, and an interlayerdielectric (ILD) layer 68 is formed on the CESL 66. Next, a planarizingprocess such as CMP is conducted to remove part of the ILD layer 68 andpart of the CESL 66 for exposing the hard mask 44 so that the topsurfaces of the hard mask 44 and the ILD layer 68 are coplanar.

Referring to FIGS. 12-15, in which FIG. 12 is a top view illustrating amethod for fabricating a semiconductor device according to an embodimentof the present invention following FIG. 9, FIG. 13 illustrates across-sectional view of FIG. 12 for fabricating the semiconductor devicealong the sectional line II′, FIG. 14 illustrates a cross-sectional viewof FIG. 12 for fabricating the semiconductor device along the sectionalline JJ′, and FIG. 15 illustrates a cross-sectional view of FIG. 12 forfabricating the semiconductor device along the sectional line KK′. Asshown in FIGS. 12-15, a replacement metal gate (RMG) process isconducted to transform the gate structure 52, 54 into metal gates. Forinstance, the RMG process could be accomplished by first performing aselective dry etching or wet etching process using etchants includingbut not limited to for example ammonium hydroxide (NH₄OH) ortetramethylammonium hydroxide (TMAH) to remove the second hard mask 44,the gate layer 22, and even gate dielectric layer 20 from gatestructures 52, 54 for forming recesses (not shown) in the ILD layer 68.

Next, a selective interfacial layer 70 or gate dielectric layer (notshown), a high-k dielectric layer 72, a work function metal layer 74,and a low resistance metal layer 76 are formed in the recess, and aplanarizing process such as CMP is conducted to remove part of lowresistance metal layer 76, part of work function metal layer 74, andpart of high-k dielectric layer 72 to form metal gates 78. Next, part ofthe low resistance metal layer 76, part of the work function metal layer74, and part of the high-k dielectric layer 72 are removed to formanother recess (not shown), and a hard mask 80 made of dielectricmaterial including but not limited to for example silicon nitride isdeposited into the recess so that the top surfaces of the hard mask 80and ILD layer 68 are coplanar. In this embodiment, the gate structure ormetal gate 78 fabricated through high-k last process of a gate lastprocess preferably includes an interfacial layer 70 or gate dielectriclayer (not shown), a U-shaped high-k dielectric layer 72, a U-shapedwork function metal layer 74, and a low resistance metal layer 76.

In this embodiment, the high-k dielectric layer 72 is preferablyselected from dielectric materials having dielectric constant (k value)larger than 4. For instance, the high-k dielectric layer 72 may beselected from hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO₄),hafnium silicon oxynitride (HfSiON), aluminum oxide (A1 ₂ 0 ₃),lanthanum oxide (La₂O₃), tantalum oxide (Ta₂O₅), yttrium oxide (Y₂O₃),zirconium oxide (ZrO₂), strontium titanate oxide (SrTiO₃), zirconiumsilicon oxide (ZrSiO₄), hafnium zirconium oxide (HfZrO₄), strontiumbismuth tantalate (SrBi₂Ta₂O₉, SBT), lead zirconate titanate(PbZr_(x)Ti_(1-x)O₃, PZT), barium strontium titanate(Ba_(x)Sr_(1-x)TiO₃, BST) or a combination thereof.

In this embodiment, the work function metal layer 74 is formed fortuning the work function of the metal gate in accordance with theconductivity of the device. For an NMOS transistor, the work functionmetal layer 74 having a work function ranging between 3.9 eV and 4.3 eVmay include titanium aluminide (TiAl), zirconium aluminide (ZrAl),tungsten aluminide (WAl), tantalum aluminide (TaAl), hafnium aluminide(HfAl), or titanium aluminum carbide (TiAlC), but it is not limitedthereto. For a PMOS transistor, the work function metal layer 74 havinga work function ranging between 4.8 eV and 5.2 eV may include titaniumnitride (TiN), tantalum nitride (TaN), tantalum carbide (TaC), but it isnot limited thereto. An optional barrier layer (not shown) could beformed between the work function metal layer 74 and the low resistancemetal layer 76, in which the material of the barrier layer may includetitanium (Ti), titanium nitride (TiN), tantalum (Ta) or tantalum nitride(TaN). Furthermore, the material of the low-resistance metal layer 76may include copper (Cu), aluminum (Al), titanium aluminum (TiAl), cobalttungsten phosphide (CoWP) or any combination thereof.

Next, a pattern transfer process is conducted by using a patterned mask(not shown) as mask to remove part of the ILD layer 68 and part of theCESL 66 adjacent to the metal gates 78 and SDB structure 40 for formingcontact holes (not shown) exposing the source/drain regions 62underneath. Next, metals including a barrier layer selected from thegroup consisting of Ti, TiN, Ta, and TaN and a low resistance metallayer selected from the group consisting of W, Cu, Al, TiAl, and CoWPare deposited into the contact holes, and a planarizing process such asCMP is conducted to remove part of aforementioned barrier layer and lowresistance metal layer for forming contact plugs 82 electricallyconnecting the source/drain regions 62. This completes the fabricationof a semiconductor device according to a preferred embodiment of thepresent invention.

It should be noted that even though the aforementioned embodiment firstforms the first trench 28 for fabricating the SDB structure 40 in FIG. 3and then forms the second trench 36 for fabricating the gate isolationstructure 42, according to an embodiment of the present invention, itwould also be desirable to reverse the order for forming the firsttrench 28 and second trench 36 by first forming the second trench 36used for fabricating the gate isolation structure 42 in the STI 18according to the process shown in FIG. 5 and then forming the firsttrench 28 used for fabricating the SDB structure 40 according to theprocess shown in FIG. 3, depositing a dielectric material into the firsttrench 28 and the second trench 36 at the same time, and conducting aplanarizing process to remove part of the dielectric material forforming the SDB structure 40 and gate isolation structure 42, which isalso within the scope of the present invention.

Moreover, even though the hard mask 44 made of hard masks 48, 50 areformed on the surface of the gate layer 22 after the SDB structure 40and gate isolation structure 42 are formed as shown in FIG. 8, accordingto an embodiment of the present invention, it would also be desirable toform at least a hard mask such as a hard mask 48 made of silicon nitrideon the surface of the gate layer 22 before forming the patterned mask 24as shown in FIG. 2, and then forming the patterned mask 24 on thesurface of the hard mask before continue with the follow-up process. Forinstance, the patterned mask 24 could then be used as mask to removepart of the hard mask, part of the gate layer 22, part of the gatedielectric layer 20, and part of the fin-shaped structures 14 to formthe first trench 28 used for preparing the SDB structure 40, which isalso within the scope of the present invention.

Referring to FIG. 14, FIG. 14 illustrates a structural view of asemiconductor device according to an embodiment of the presentinvention. As shown in FIG. 14, the semiconductor device preferablyincludes a gate isolation structure 42 disposed on the STI 18, a spacer60 around the gate isolation structure 42, epitaxial layer 64 disposedon one side of the gate isolation structure 42, another epitaxial layer64 disposed on another side of the gate isolation structure 42, aplurality of fin-shaped structures 14 disposed under the epitaxiallayers 64, a CESL 66 disposed on the surface of the gate isolationstructure 42, the STI 18, and part of the epitaxial layers 64, an ILDlayer 68 disposed on the CESL 66, and contact plugs 82 disposed adjacentto two sides of the gate isolation structure 42 and on the epitaxiallayers 64.

Preferably, the gate isolation structure 42 and the STI 18 could be madeof same material or different materials, in which the gate isolationstructure 42 could include but not limited to for example SiO₂, SiN, orSiON. Moreover, even though the top or topmost surface of the gateisolation structure 42 is even with the top or topmost surface of theadjacent epitaxial layers 64, according to other embodiments of thepresent invention, the topmost surface of the gate isolation structure42 could also be slightly higher than or slightly lower than the topmostsurface of the epitaxial layers 64 on the two sides, which is alsowithin the scope of the present invention.

Referring to FIG. 15, FIG. 15 illustrates a structural view of asemiconductor device according to an embodiment of the presentinvention. As shown in FIG. 15, the semiconductor device preferablyincludes a gate structure 52 and gate structure 54 disposed on the STI18, a hard mask 80 disposed on each of the gate structures 52, 54, agate isolation structures 42 disposed between the two gate structures52, 54, spacers 60 disposed adjacent to the gate structures 52, 54 anddirectly on the gate isolation structure 42, a CESL 66 disposed on thegate isolation structure 42 and between the two spacers 60, and an ILDlayer 68 disposed on the CESL 66, in which the top surfaces of the ILDlayer 68 and the hard mask 80 are coplanar.

Viewing from a more details perspective, the top or topmost surface ofthe gate isolation structure 42 is preferably lower than the topmostsurface of the gate structures 52, 54 or gate electrodes adjacent to twosides of the gate isolation structure 42, the sidewalls of the gateisolation structure 42 are aligned with sidewalls of the hard masks 80,the gate structures 52, 54 contact the gate isolation structure 42directly, the spacers 60 are disposed on sidewalls of the hard mask 80and gate structures 52, 54 while the bottom or bottommost surface of thespacers 60 are slightly higher than the bottommost surface of the gatestructures 52, 54 but slightly lower than the topmost surface of thegate structures 52, 54, the bottom surface of the spacers 60 contact thegate isolation structure 42 directly, the CESL 66 contacts the spacers60 and the gate isolation structure 42 directly, the CESL 66 preferablyincludes a U-shaped cross-section, and the top surfaces of the ILD layer68, the CESL 66, and the hard mask 80 are coplanar.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A method for fabricating semiconductor device,comprising: forming a fin-shaped structure on a substrate, wherein thefin-shaped structure is extending along a first direction; forming agate layer on the fin-shaped structure; removing part of the gate layerand part of the fin-shaped structure to form a first trench for dividingthe fin-shaped structure into a first portion and a second portion,wherein the first trench is extending along a second direction; forminga patterned mask on the gate layer and into the first trench; removingpart of the gate layer and part of the fin-shaped structure to form asecond trench, wherein the second trench is extending along the firstdirection; and forming a dielectric layer to fill the first trench andthe second trench.
 2. The method of claim 1, further comprising:planarizing the dielectric layer to form a single diffusion break (SDB)structure in the first trench and a gate isolation structure in the gatelayer.
 3. The method of claim 2, wherein top surfaces of the gate layer,the SDB structure, and the gate isolation structure are coplanar.
 4. Themethod of claim 2, further comprising: forming a shallow trenchisolation (STI) around the fin-shaped structure; forming the gate layeron the fin-shaped structure and the STI; removing part of the gate layerto expose the STI for forming the second trench; and forming the gateisolation structure on the STI.
 5. The method of claim 2, furthercomprising: forming a hard mask on the gate layer, the SDB structure,and the gate isolation structure; removing part of the hard mask andpart of the gate layer to form a gate structure; forming a spaceradjacent to the gate structure, the SDB structure and the gate isolationstructure; forming a source/drain region adjacent to the spacer; forminga contact etch stop layer (CESL) on the gate structure, the SDBstructure, and the gate isolation structure; forming an interlayerdielectric (ILD) layer on the CESL; and performing a replacement metalgate (RMG) process to transform the gate structure into a metal gate. 6.The method of claim 5, further comprising removing part of the hard maskand part of the gate layer to form the gate structure while removingpart of the SDB structure.
 7. The method of claim 6, wherein a topsurface of the SDB structure is lower than a top surface of gatestructure.
 8. The method of claim 5, further comprising removing part ofthe hard mask and part of the gate layer to form the gate structurewhile removing part of the gate isolation structure.
 9. The method ofclaim 8, wherein a top surface of the gate isolation structure is lowerthan a top surface of gate structure.